SiC

Cissoid Announces 3-phase Sic Mosfet Intelligent Power Module for E-mobility

Cissoid Announces 3-phase Sic Mosfet Intelligent Power Module for E-mobility

CISSOID, the leader in high temperature semiconductors for the most demanding markets, announces today a new 3-Phase SiC MOSFET Intelligent Power Module (IPM) platform for E-mobility. This new IPM technology offers an all-in-one solution including a 3-Phase water-cooled SiC MOSFET module with built-in gate drivers. Co-optimizing the electrical, mechanical and thermal design of the power […]

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Gen2 650v Sic Schottky Diodes Offer Improved Efficiency, Reliability and Thermal Management

Littelfuse, Inc. today introduced two second-generation series of 650V, AEC-Q101-qualified silicon carbide (SiC) Schottky Diodes. The LSIC2SD065CxxA and LSIC2SD065AxxA Series SiC Schottky Diodes are available with a choice of current ratings (6A, 8A, 10A, 16A or 20A). They offer power electronics system designers a variety of performance advantages, including negligible reverse recovery current, high surge capability,

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CISSOID-TO-EXHIBIT-NEW-HIGH-TEMPERATURE-GATE-DRIVERS-SIC-MOSFETS-AND-POWER-MODULES

Cissoid to Exhibit New High Temperature Gate Drivers, Sic Mosfet’s and Power Modules

CISSOID, the leader in high temperature semiconductors for the most demanding markets, will present new High Temperature Gate Drivers, SiC MOSFET’s and IGBT Power Modules at PCIM 2019, the world’s leading exhibition and conference for power electronics, intelligent motion, renewable energy, and energy management. The company is introducing a new Gate Driver board optimized for 62mm Silicon Carbide (SiC)

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