High-performance Silicon Carbide (Sic) Schottky Diodes

MCC’s SiC diodes are well-suited for inverters for solar and motion control, UPS, Telekom base stations, PFC, and lighting

High-performance Silicon Carbide (Sic) Schottky Diodes

Micro Commercial Components’ high-performance SiC Schottky diodes provide a high-efficiency, high-temperature performance of up to +175°C. These diodes, together with the 650 V super-junction MOSFETs, create a complete cost-efficient discrete solution.

These SiC diodes are available in 650 V (2 A/4 A) and 1200 V (2 A/5 A/10 A/20 A) versions. Available packages (TO-220, TO-247, and DPAK), other current levels, and housings are under qualification. Typical applications for these SiC diodes are inverters for solar and motion control, UPS, Telekom base stations, power factor correction (PFC), and lighting applications.

Features

  • Extreme low switching loss
  • Higher switching frequency
  • Positive temperature coefficient for parallel application
  • Higher efficiency to standard Schottky diodes
  • Higher working temperature up to +175°C
  • Higher voltage up to 1200 V

Applications

  • Inverters for solar and motion controls
  • UPS
  • Telekom base stations
  • PFC and lighting applications

Source: High-performance Silicon Carbide (Sic) Schottky Diodes

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