GaN Systems and ON Semiconductor announced the availability of the NCP13992UHD300WGEVB, the world’s highest power density 300W ac-dc adapter reference design using GaN Systems’ 650V, 15A gallium-nitride (GaN) E-HEMTs and multiple ON Semiconductor controller and driver ICs, including the NCP51820, NCP13992, NCP1616, and NCP4306.
This complete system reference design is a highly versatile and low cost, allowing designers to easily develop and bring to market ultra-high power density (UHPD) ac-dc adapters for various applications in HDTV power supplies, gaming notebook, and console adapters as well as ultra-small power supplies for industrial and medical devices.
This ac-dc adapter reference design is based on a modular concept that brings several advantages including; versatility, the possibility to test own daughter cards, easy design update, the opportunity for checking functionality separated module, and spare room for additional features. These allow the user to enhance experimenting with daughter cards.
This modular construction also helps to reduce PCB area, thus increasing power density and also allowing for a reduced number of PCB layers. All PCBs are designed as 2−layers with 70μm copper plating for better thermal management. Also, the 70μm copper helps to reduce conduction losses especially on the secondary side which carries relatively high output current.
Summary Of Features
- GaN HEMT Based Design with Ultra−High Power Density Up to 32 W/inch3
- Simple Two Layer PCB Design for all Board Modules
- 300W Maximum Power with Peak Power Up to 340W at Fixed Output Voltage 19V
- Wide Input Voltage Range 90- to 265-Vrms
- Synchronous CrM PFC with using GaN HEMT
- 500kHz LLC Stage Incorporated with 600V HV GaN Driver and High Performance Current Mode LLC Controller
- Complies with CoC5 Tier2
This reference design/evaluation board demonstrates ON Semiconductor’s high-performance controllers, drivers and discrete semiconductor content capabilities that enable efficient UHPD design implementation. This design includes a synchronous power factor correction boost converter which is operated in the discontinuous conduction or critical conduction mode (DCM/ CrM) depending on loading and LLC power stage, with secondary-side synchronous rectification.