2gb, 4gb, and 8gb Lpddr4 Sdrams With Low Power Usage

Alliance Memory 2Gb, 4Gb, and 8Gb LPDDR4 SDRAMs Offer Low Power Consumption to Increase Battery Life in Mobile Electronics; Devices Combine Low-Voltage Operation of 1.1V With Fast Clock Speeds of 1.6GHz for increased Efficiency and Performance


The 2Gb AS4C128M16MD4-062BAN, 4Gb AS4C256M16MD4-062BAN and AS4C128M32MD4-062BAN, and 8Gb AS4C256M32MD4-062BAN provide lower power consumption and faster speeds than the previous-generation LPDDR3 SDRAMs. The devices are available in 200-ball FBGA packages.

The devices offer low-voltage operation of 1.1V/1.8V to prolong battery life in portable electronics for the consumer and industrial markets. For higher efficiency for advanced audio and high-resolution video in embedded applications, the LPDDR4 SDRAMs provide clock speeds of up to 1.6GHz for high transfer rates of 3.2Gbps. For automotive applications, the AEC-Q100 qualified products can operate over an extended temperature range of -40°C to +105°C.

The LPDDR4 SDRAMs are organized as 1 channel (AS4C128M16MD4-062BAN and AS4C256M16MD4-062BAN) and 2 channels (AS4C128M32MD4-062BAN and AS4C256M32MD4-062BAN) per device. Individual channels consist of eight banks of 16 bits. The components feature fully synchronous operation; programmable read and write burst lengths of 16, 32, and on the fly; and selectable output drive strength. An integrated temperature sensor controls the self-refresh rate.

Alliance Memory’s LPDDR4 SDRAMs have been developed to provide a reliable drop-in, pin-for-pin-compatible replacement for numerous similar solutions in high-bandwidth, high-performance memory system applications — eliminating the need for costly redesigns and part requalification.

Key Specifications and Benefits:

  • On-chip ECC
  • AEC-Q100 qualified
  • Low-voltage operation of 1.1V/1.8V
  • Fast clock speeds of 1.6GHz
  • Extremely high transfer rates of 3.2Gbps
  • Automotive A2 Grade, temperature range -40°C to +105°C
  • Eight internal banks per channel
  • x32 for 2-channels per device (AS4C128M32MD4, AS4C256M32MD4)
  • x16 for 1-channel per device (AS4C128M16MD4, AS4C256M16MD4)
  • Programmable read and write latencies
  • Programmable and on-the-fly burst lengths (16 and 32)
  • Selectable output drive strength
  • On-chip temperature sensor to control self-refresh rate
  • Offered in the 200-ball FBGA package

Source: 2gb, 4gb, and 8gb Lpddr4 Sdrams With Low Power Usage

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